DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ625
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SJ625 is a switching device which can be driven directly
by a 1.8 V power source.
+0.1
–0.05
0.4
+0.1
–0.06
0.16
This device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
3
0 to 0.1
FEATURES
1
2
• 1.8 V drive available
• Low on-state resistance
0.65
0.95 0.95
1.9
RDS(on)1 = 113 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
RDS(on)2 = 171 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
RDS(on)3 = 314 mΩ MAX. (VGS = –1.8 V, ID = –1.0 A)
0.9 to 1.1
2.9 ±0.2
1
: Gate
ORDERING INFORMATION
2 : Source
3 : Drain
PART NUMBER
PACKAGE
2SJ625
SC-96 (Mini Mold Thin Type)
Marking: XM
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
–20
m8.0
V
V
Drain
m3.0
A
Body
Diode
m12
A
Gate
0.2
W
W
°C
°C
Gate
Protection
Diode
Total Power Dissipation Note2
PT2
1.25
Source
Channel Temperature
Tch
150
Storage Temperature
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published June 2002 NS CP(K)
Printed in Japan
D15961EJ1V0DS00 (1st edition)
©
2002