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2SJ625 PDF预览

2SJ625

更新时间: 2024-11-05 22:33:15
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日电电子 - NEC /
页数 文件大小 规格书
8页 68K
描述
MOS FIELD EFFECT TRANSISTOR

2SJ625 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SJ625  
P-CHANNEL MOS FIELD EFFECT TRANSISTOR  
FOR SWITCHING  
DESCRIPTION  
PACKAGE DRAWING (Unit: mm)  
The 2SJ625 is a switching device which can be driven directly  
by a 1.8 V power source.  
+0.1  
–0.05  
0.4  
+0.1  
–0.06  
0.16  
This device features a low on-state resistance and excellent  
switching characteristics, and is suitable for applications such  
as power switch of portable machine and so on.  
3
0 to 0.1  
FEATURES  
1
2
1.8 V drive available  
Low on-state resistance  
0.65  
0.95 0.95  
1.9  
RDS(on)1 = 113 mMAX. (VGS = –4.5 V, ID = –1.5 A)  
RDS(on)2 = 171 mMAX. (VGS = –2.5 V, ID = –1.5 A)  
RDS(on)3 = 314 mMAX. (VGS = –1.8 V, ID = –1.0 A)  
0.9 to 1.1  
2.9 ±0.2  
1
: Gate  
ORDERING INFORMATION  
2 : Source  
3 : Drain  
PART NUMBER  
PACKAGE  
2SJ625  
SC-96 (Mini Mold Thin Type)  
Marking: XM  
EQUIVALENT CIRCUIT  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TA = 25°C)  
Drain Current (pulse) Note1  
Total Power Dissipation  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
–20  
m8.0  
V
V
Drain  
m3.0  
A
Body  
Diode  
m12  
A
Gate  
0.2  
W
W
°C  
°C  
Gate  
Protection  
Diode  
Total Power Dissipation Note2  
PT2  
1.25  
Source  
Channel Temperature  
Tch  
150  
Storage Temperature  
Tstg  
–55 to +150  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Mounted on FR-4 board, t 5 sec.  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No.  
Date Published June 2002 NS CP(K)  
Printed in Japan  
D15961EJ1V0DS00 (1st edition)  
©
2002  

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