2SJ625

更新时间： 2024-11-20 22:33:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	68K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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2SJ625 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ625

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ625 is a switching device which can be driven directly

by a 1.8 V power source.

+0.1

–0.05

0.4

+0.1

–0.06

0.16

This device features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• 1.8 V drive available

• Low on-state resistance

0.65

0.95 0.95

1.9

R^DS(on)1= 113 mΩ MAX. (V^GS= –4.5 V, I^D= –1.5 A)

R^DS(on)2= 171 mΩ MAX. (V^GS= –2.5 V, I^D= –1.5 A)

R^DS(on)3= 314 mΩ MAX. (V^GS= –1.8 V, I^D= –1.0 A)

0.9 to 1.1

2.9 ±0.2

: Gate

ORDERING INFORMATION

2 : Source

3 : Drain

PART NUMBER

PACKAGE

2SJ625

SC-96 (Mini Mold Thin Type)

Marking: XM

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–20

m8.0

Drain

m3.0

Body

Diode

m12

Gate

0.2

°C

Gate

Protection

Diode

Total Power Dissipation ^Note2

P^T2

1.25

Source

Channel Temperature

Tch

150

Storage Temperature

Tstg

–55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 2002 NS CP(K)

Printed in Japan

D15961EJ1V0DS00 (1st edition)

2002

12 3 4 5 6 7 8

中文翻译

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与2SJ625相关器件

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2SJ625-L-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346
2SJ625-L-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346
2SJ625-T1B	RENESAS	获取价格	2SJ625-T1B
2SJ625-T2B-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346
2SJ625-T2B-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3A I(D),SOT-346
2SJ626	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
2SJ626	RENESAS	获取价格	1500mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN
2SJ626-T2B	RENESAS	获取价格	2SJ626-T2B
2SJ628	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ629	SANYO	获取价格	General-Purpose Switching Device Applications