生命周期: | Transferred | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.33 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.205 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ635 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
2SJ636 | SANYO |
获取价格 |
2SJ636 | |
2SJ637 | SANYO |
获取价格 |
DC/DC FOR CONVERTER | |
2SJ643 | SANYO |
获取价格 |
P CHANNEL MOS SILICON TRANSISTOR | |
2SJ645 | SANYO |
获取价格 |
P CHANNEL MOS SILICON TRANSISTOR | |
2SJ646 | SANYO |
获取价格 |
2SJ646 | |
2SJ647 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
2SJ647 | RENESAS |
获取价格 |
400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SSP, SC-70, 3 PIN | |
2SJ647-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
2SJ647-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,400MA I(D),SC-70 |