Datasheet > 2SJ612

2SJ612

更新时间： 2024-11-18 03:56:39

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	36K
描述
Ultrahigh-Speed Switching Applications

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2SJ612 数据手册

Ordering number : ENN7178A

2SJ612

P-Channel Silicon MOSFET

2SJ612

Ultrahigh-Speed Switching Applications

Preliminary

Features

Package Dimensions

unit : mm

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

2062A

[2SJ612]

4.5

1.6

1.5

0.4

0.5

0.4

1.5

3.0

(Bottom view)

0.75

1 : Gate

2 : Drain

3 : Source

Specifications

SANYO : PCP

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

--20

Unit

DSS

Gate-to-Source Voltage

Drain Current (DC)

±10

GSS

--2.5

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

--10

Mounted on a ceramic board (250mm²✕0.8mm)

1.0

°C

Allowable Power Dissipation

Tc=25°C

3.5

Channel Temperature

Storage Temperature

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0

--20

µA

(BR)DSS

D GS

=--20V, V =0

--1

DSS

GSS

=±8V, V =0

±10

(off)

=--10V, I =--1mA

--0.4

2.0

--1.3

Forward Transfer Admittance

yfs

=--10V, I =--1.3A

2.8

(on)1

=--1.3A, V =--4V

190

250

245

350

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=--0.7A, V =--2.5V

D GS

Marking : JS

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1502 TS IM TA-3870 / 41002 TS IM TA-3522 No.7178-1/4

12 3 4

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与2SJ612相关器件

型号	品牌	获取价格	描述	数据表
2SJ613	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ615	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ616	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ618	TOSHIBA	获取价格	High-Power Amplifier Applications
2SJ619	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
2SJ619(TE24L,Q)	TOSHIBA	获取价格	MOSFET P-CH 100V 16A SC-97
2SJ619_06	TOSHIBA	获取价格	Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications
2SJ619_09	TOSHIBA	获取价格	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ620	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Cha
2SJ620(TE24L)	TOSHIBA	获取价格	2SJ620(TE24L)

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