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2SJ620(TE24L)

更新时间： 2024-11-21 19:32:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 181K
描述
2SJ620(TE24L)

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中文翻译

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2SJ620(TE24L) 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Base Number Matches：1

2SJ620(TE24L) 数据手册

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2SJ620  
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)  
2SJ620  
Switching Regulator and DC-DC Converter Applications  
Unit: mm  
Motor Drive Applications  
•
•
•
•
•
4-V gate drive  
Low drain-source ON-resistance: R  
= 63 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 15 S (typ.)  
fs  
Low leakage current: I  
= −100 μA (max) (V  
= −100 V)  
DSS  
DS  
Enhancement mode: V = −0.8 to −2.0 V (V  
= −10 V, I = −1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
−100  
−100  
±20  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC (Note 1)  
Pulse (Note 1)  
I
−18  
D
Drain current  
A
I
−72  
DP  
JEDEC  
JEITA  
―
―
Drain power dissipation (Tc = 25°C)  
P
125  
W
D
AS  
AR  
Single pulse avalanche energy  
E
937  
mJ  
(Note 2)  
TOSHIBA  
2-9F1C  
Avalanche current  
I
−18  
12.5  
A
Weight: 0.74 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
stg  
−55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Circuit Configuration  
4
Characteristics  
Symbol  
Max  
1.0  
Unit  
Thermal resistance, channel to case  
R
°C/W  
th (ch-c)  
1
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: = −50 V, T = 25°C (initial), L = 3.56 mH, R = 25 Ω, I = −18 A  
AR  
V
DD  
ch  
G
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-12-10  
123456

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