Datasheet > 2SJ620_06

2SJ620_06

更新时间： 2024-11-06 03:45:15

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关
页数	文件大小	规格书
6页	191K
描述
Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

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2SJ620_06 数据手册

2SJ620

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²-π-MOSV)

2SJ620

Switching Regulator and DC-DC Converter Applications

Unit: mm

Motor Drive Applications

•

4-V gate drive

Low drain-source ON resistance: R

= 63 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 15 S (typ.)

Low leakage current: I

= −100 μA (max) (V

= −100 V)

DSS

Enhancement model: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−100

±20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

−18

Drain current

−72

Drain power dissipation (Tc = 25°C)

125

JEDEC

JEITA

―

Single pulse avalanche energy

937

(Note 2)

SC-97

Avalanche current

−18

12.5

TOSHIBA

2-9F1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 0.74 g (typ.)

150

Storage temperature range

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

1.0

Unit

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = −50 V, T = 25°C (initial), L = 3.56 mH, R = 25 Ω, I = −18 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6

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