Datasheet > 2SJ619_06

2SJ619_06

更新时间： 2024-11-01 03:56:39

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关
页数	文件大小	规格书
6页	188K
描述
Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

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2SJ619_06 数据手册

2SJ619

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L²-π-MOSV)

2SJ619

Switching Regulator and DC-DC Converter Applications

Unit: mm

Motor Drive Applications

•

4-V gate drive

Low drain-source ON resistance: R

= 0.15 Ω (typ.)

DS (ON)

High forward transfer admittance: ⎪Y ⎪ = 7.7 S (typ.)

Low leakage current: I

= −100 µA (max) (V

= −100 V)

DSS

Enhancement model: V = −0.8 to −2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−100

±20

−16

−64

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

(Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation (Tc = 25°C)

SC-97

Single pulse avalanche energy

292

(Note 2)

TOSHIBA

2-9F1B

Avalanche current

−16

7.5

Weight: 0.74 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Circuit Configuration

Characteristics

Symbol

Max

1.67

Unit

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = −25 V, T = 25°C (initial), L = 1.84 mH, R = 25 Ω, I = −16 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

2006-11-16

12 3 4 5 6

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与2SJ619_06相关器件

型号	品牌	获取价格	描述	数据表
2SJ619_09	TOSHIBA	获取价格	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ620	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P Cha
2SJ620(TE24L)	TOSHIBA	获取价格	2SJ620(TE24L)
2SJ620_06	TOSHIBA	获取价格	Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications
2SJ620_09	TOSHIBA	获取价格	Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ621	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
2SJ621	RENESAS	获取价格	3500mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-96, 3 PIN
2SJ621-A	NEC	获取价格	暂无描述
2SJ621-A	RENESAS	获取价格	3500mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-96, 3 PIN
2SJ621-L-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,12V V(BR)DSS,3.5A I(D),SOT-346

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