生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.83 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 6 A | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.069 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 3.5 W |
最大脉冲漏极电流 (IDM): | 24 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ618 | TOSHIBA |
获取价格 |
High-Power Amplifier Applications | |
2SJ619 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV) | |
2SJ619(TE24L,Q) | TOSHIBA |
获取价格 |
MOSFET P-CH 100V 16A SC-97 | |
2SJ619_06 | TOSHIBA |
获取价格 |
Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications | |
2SJ619_09 | TOSHIBA |
获取价格 |
Switching Regulator and DC-DC Converter Applications Motor Drive Applications | |
2SJ620 | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon P Cha | |
2SJ620(TE24L) | TOSHIBA |
获取价格 |
2SJ620(TE24L) | |
2SJ620_06 | TOSHIBA |
获取价格 |
Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications | |
2SJ620_09 | TOSHIBA |
获取价格 |
Switching Regulator and DC-DC Converter Applications Motor Drive Applications | |
2SJ621 | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR |