Datasheet > 2SJ609

2SJ609

更新时间： 2024-11-17 22:35:55

品牌	Logo	应用领域
三洋 - SANYO		晶体转换器晶体管开关局域网
页数	文件大小	规格书
4页	34K
描述
DC / DC Converter Applications

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中文翻译

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技术参数
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2SJ609 技术参数

生命周期：	Obsolete	零件包装代码：	SIP
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.83
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (Abs) (ID)：	5 A
最大漏极电流 (ID)：	5 A	最大漏源导通电阻：	0.295 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ609 数据手册

Ordering number : ENN6671

2SJ609

P-Channel Silicon MOSFET

2SJ609

DC / DC Converter Applications

Features

Package Dimensions

• Low ON-resistance.

unit : mm

•

Ultrahigh-speed switching.

2190

• 4V drive.

[2SJ609]

8.0

4.0

1.0

3.3

1.0

3.0

1.6

0.8

0.7

0.75

1 : Source

2 : Drain

3 : Gate

2.4

4.8

SANYO : TO-126ML

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

--60

±20

-- 5

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

PW≤10µs, duty cycle≤1%

--20

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Storage Temperature

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--60

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

=--1mA, V =0

(BR)DSS

D GS

=--60V, V =0

--10

µA

DSS

GSS

=±16V, V =0

±10

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

90100 TS IM TA-2920 No.6671-1/4

12 3 4

中文翻译

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与2SJ609相关器件

型号	品牌	获取价格	描述	数据表
2SJ610	TOSHIBA	获取价格	Switching Regulator, DC-DC Converter and Motor Drive Applications
2SJ610(2-7B1B)	TOSHIBA	获取价格	TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET G
2SJ610(2-7J1B)	TOSHIBA	获取价格	TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7J1B, SC-64, 3 PIN, FET G
2SJ610_06	TOSHIBA	获取价格	Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applicatio
2SJ610_09	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
2SJ612	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ613	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ615	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ616	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SJ618	TOSHIBA	获取价格	High-Power Amplifier Applications

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