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2SJ610_06 PDF预览

2SJ610_06

更新时间: 2024-09-15 03:56:39
品牌 Logo 应用领域
东芝 - TOSHIBA 转换器稳压器开关电机驱动
页数 文件大小 规格书
6页 183K
描述
Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

2SJ610_06 数据手册

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2SJ610  
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)  
2SJ610  
Switching Regulator, DC/DC Converter and  
Motor Drive Applications  
Unit: mm  
Low drain-source ON-resistance: R  
= 1.85 (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 18 S (typ.)  
fs  
Low leakage current: I  
= 100 μA (V  
= 250 V)  
DSS  
DS  
Enhancement mode: V = 1.5~3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
250  
250  
±20  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
DC  
(Note 1)  
I
2.0  
D
Drain current  
A
Pulse (t = 1 ms)  
I
4.0  
20  
DP  
(Note 1)  
JEDEC  
JEITA  
Drain power dissipation  
P
W
D
AS  
AR  
SC-64  
Single-pulse avalanche energy  
E
180  
mJ  
TOSHIBA  
2-7B1B  
(Note 2)  
Avalanche current  
I
2.0  
2.0  
A
Weight: 0.36 g (typ.)  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
T
150  
ch  
Storage temperature range  
T
55~150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage,  
etc.) are within the absolute maximum ratings. Please design the  
appropriate reliability upon reviewing the Toshiba Semiconductor  
Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
JEDEC  
JEITA  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
TOSHIBA  
2-7J1B  
Note 2: V  
R
= −50 V, T = 25°C (initial), L = 75 mH, I  
= 25 Ω  
= −2.0 A,  
DD  
ch  
AR  
Weight: 0.36 g (typ.)  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-16  

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