2SJ610
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ610
Switching Regulator, DC/DC Converter and
Motor Drive Applications
Unit: mm
•
•
•
•
Low drain-source ON-resistance: R
= 1.85 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 18 S (typ.)
fs
Low leakage current: I
= −100 μA (V
= −250 V)
DSS
DS
Enhancement mode: V = −1.5~−3.5 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
−250
−250
±20
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
−2.0
D
Drain current
A
Pulse (t = 1 ms)
I
−4.0
20
DP
(Note 1)
JEDEC
JEITA
―
Drain power dissipation
P
W
D
AS
AR
SC-64
Single-pulse avalanche energy
E
180
mJ
TOSHIBA
2-7B1B
(Note 2)
Avalanche current
I
−2.0
2.0
A
Weight: 0.36 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
6.25
125
°C/W
°C/W
th (ch-c)
JEDEC
JEITA
―
―
th (ch-a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
TOSHIBA
2-7J1B
Note 2: V
R
= −50 V, T = 25°C (initial), L = 75 mH, I
= 25 Ω
= −2.0 A,
DD
ch
AR
Weight: 0.36 g (typ.)
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-16