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2SJ610(2-7B1B)

更新时间： 2024-11-18 15:31:39
品牌 Logo 应用领域
东芝 - TOSHIBA 开关脉冲晶体管
页数 文件大小 规格书
6页 176K
描述
TRANSISTOR 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7B1B, SC-64, 3 PIN, FET General Purpose Power

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2SJ610(2-7B1B) 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Lifetime Buy零件包装代码：SC-64
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.3雪崩能效等级（Eas）：180 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (ID)：2 A
最大漏源导通电阻：2.55 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：4 A
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SJ610(2-7B1B) 数据手册

 浏览型号2SJ610(2-7B1B)的Datasheet PDF文件第2页浏览型号2SJ610(2-7B1B)的Datasheet PDF文件第3页浏览型号2SJ610(2-7B1B)的Datasheet PDF文件第4页浏览型号2SJ610(2-7B1B)的Datasheet PDF文件第5页浏览型号2SJ610(2-7B1B)的Datasheet PDF文件第6页 
2SJ610  
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)  
2SJ610  
Switching Regulator, DC/DC Converter and  
Motor Drive Applications  
Unit: mm  
6.5 ± 0.2  
5.2 ± 0.2  
0.6 MAX.  
•
•
•
•
Low drain-source ON-resistance: R  
= 1.85 Ω (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 18 S (typ.)  
fs  
Low leakage current: I  
= −100 μA (V  
= −250 V)  
DSS  
DS  
Enhancement mode: V = −1.5 to −3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
1.1 ± 0.2  
0.8 MAX.  
0.6 MAX.  
Absolute Maximum Ratings (Ta = 25°C)  
1.05 MAX.  
0.6 ± 0.15  
1
2
3
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
−250  
−250  
±20  
V
V
V
DSS  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
2
2.3 ± 0.15  
1. GATE  
2. DRAIN  
2.3 ± 0.15  
DC  
(Note 1)  
I
−2.0  
D
1
Drain current  
A
Pulse (t = 1 ms)  
（HEAT SINK）  
3. SOURSE  
I
−4.0  
20  
DP  
3
(Note 1)  
Drain power dissipation  
P
W
D
AS  
AR  
JEDEC  
―
―
Single-pulse avalanche energy  
E
180  
mJ  
(Note 2)  
JEITA  
Avalanche current  
I
−2.0  
2.0  
A
TOSHIBA  
2-7J1B  
Repetitive avalanche energy (Note 3)  
Channel temperature  
E
mJ  
°C  
°C  
AR  
Weight: 0.36 g (typ.)  
T
150  
ch  
Storage temperature range  
T
−55 to 150  
stg  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Thermal Characteristics  
Characteristic  
Symbol  
Max  
Unit  
Thermal resistance, channel to case  
Thermal resistance, channel to ambient  
R
R
6.25  
125  
°C/W  
°C/W  
th (ch-c)  
th (ch-a)  
Note 1: Ensure that the channel temperature does not exceed 150°C.  
Note 2: V  
R
= −50 V, T = 25°C (initial), L = 75 mH, I  
= 25 Ω  
= −2.0 A,  
DD  
ch  
AR  
G
Note 3: Repetitive rating: pulse width limited by maximum channel temperature  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2010-02-05  
123456

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