是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 0.1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ167 | TOSHIBA | P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) |
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2SJ167_07 | TOSHIBA | Silicon P Channel MOS Type |
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2SJ168 | TOSHIBA | P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) |
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2SJ168(T5L,PP,F) | TOSHIBA | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, P-Channel, Silicon, Metal |
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2SJ168(T5LMAA,F) | TOSHIBA | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, P-Channel, Silicon, Metal |
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2SJ168(TE85L) | TOSHIBA | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59 |
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