Datasheet > 2SJ168_07

2SJ168_07

更新时间： 2024-11-20 03:56:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	558K
描述
Silicon P Channel MOS Type

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中文翻译

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数据手册

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2SJ168_07 数据手册

2SJ168

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ168

High Speed Switching Applications

Unit: mm

Analog Switch Applications

Interface Applications

•

Excellent switching time: t = 14 ns (typ.)

High forward transfer admittance: |Y | = 100 mS (min)

@I = −50 mA

•

Low on resistance: R

= 1.3 Ω (typ.) @ I = −50 mA

DS (ON) D

Enhancement-mode

Complementary to 2SK1062

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−60

±20

DSS

Gate-source voltage

GSS

−200

−800

200

JEDEC

JEITA

―

Drain current

Pulse

SC-59

Drain power dissipation (Ta = 25°C)

Channel temperature

°C

stg

TOSHIBA

2-3F1F

150

Weight: 0.012 g (typ.)

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is the electrostatic sensitive device. Please handle with caution.

Marking

2007-11-01

12 3 4 5

中文翻译

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