2SJ168
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications
Unit: mm
Analog Switch Applications
Interface Applications
•
•
Excellent switching time: t = 14 ns (typ.)
on
High forward transfer admittance: |Y | = 100 mS (min)
fs
@I = −50 mA
D
•
•
•
Low on resistance: R
= 1.3 Ω (typ.) @ I = −50 mA
DS (ON) D
Enhancement-mode
Complementary to 2SK1062
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
V
−60
±20
V
V
DSS
Gate-source voltage
GSS
DC
I
−200
−800
200
JEDEC
JEITA
―
D
Drain current
mA
Pulse
I
DP
SC-59
Drain power dissipation (Ta = 25°C)
Channel temperature
P
mW
°C
D
ch
stg
TOSHIBA
2-3F1F
T
150
Weight: 0.012 g (typ.)
Storage temperature range
T
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Marking
1
2007-11-01