是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.3 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 1.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ179-AZ | NEC |
获取价格 |
暂无描述 | |
2SJ179-AZ | RENESAS |
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2SJ179-AZ | |
2SJ179-T2 | NEC |
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Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal | |
2SJ180 | NEC |
获取价格 |
P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | |
2SJ181 | HITACHI |
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Silicon P-Channel MOS FET | |
2SJ181 | RENESAS |
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Silicon P Channel MOS FET | |
2SJ181(L) | HITACHI |
获取价格 |
Power Field-Effect Transistor, 25ohm, P-Channel, Metal-oxide Semiconductor FET, DPAK-3 | |
2SJ181(L)|2SJ181(S) | ETC |
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2SJ181(S) | HITACHI |
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Power Field-Effect Transistor, 25ohm, P-Channel, Metal-oxide Semiconductor FET, DPAK-3 | |
2SJ181(S)-(1) | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,600V V(BR)DSS,500MA I(D),TO-252AA |