Datasheet > 2SJ181_11

2SJ181_11

更新时间： 2024-11-20 07:20:19

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	104K
描述
Silicon P Channel MOS FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SJ181_11 数据手册

Preliminary Datasheet

R07DS0395EJ0300

(Previous: REJ03G0848-0200)

Rev.3.00

2SJ181(L), 2SJ181(S)

Silicon P Channel MOS FET

May 16, 2011

Description

High speed power switching

Features

•

Low on-resistance

High speed switching

Low drive current

No secondary breakdown

Suitable for switching regulator and DC-DC converter

Outline

RENESAS Package code: PRSS0004ZD-A

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (L)-(1) )

(Package name: DPAK (S) )

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Value

–600

±15

Unit

–0.5

–1.0

–0.5

Note 1

Drain peak current

I_{D (pulse)}

Body to drain diode reverse drain current

Channel dissipation

I_DR

Pch ^{Note 2}

Tch

°C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

2. Value at Tc = 25°C

R07DS0395EJ0300 Rev.3.00

May 16, 2011

Page 1 of 6

12 3 4 5 6 7

中文翻译

下载PDF

与2SJ181_11相关器件

型号	品牌	获取价格	描述	数据表
2SJ181L	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ181L	HITACHI	获取价格	Silicon P-Channel MOS FET
2SJ181L-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ181S	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ181S	KEXIN	获取价格	P-Channel MOS FET For High-Speed Switching
2SJ181S	HITACHI	获取价格	Silicon P-Channel MOS FET
2SJ181STL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ181STR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ182	HITACHI	获取价格	Silicon P-Channel MOS FET
2SJ182(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 3A I(D) \| TO-251VAR