Datasheet > 2SJ181S

2SJ181S

更新时间： 2024-11-20 06:23:27

品牌	Logo	应用领域
科信 - KEXIN		开关
页数	文件大小	规格书
2页	45K
描述
P-Channel MOS FET For High-Speed Switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SJ181S 数据手册

SMD Type

MOSFET

P-Channel MOS FET

For High-Speed Switching

2SJ181S

TO-252

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Features

Low on-resistance

High speed switching

Low drive current

0.127

max

+0.1

0.80

-0.1

No secondary breakdown

Suitable for switching regulator and DC-DC converter

1Gate

+0.1

0.60

-0.1

2.3

4.60

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Symbol

VDSS

VGSS

ID(DS)

ID(pulse)

Pch

Rating

-600

Unit

-0.5

Drain peak current *

-1

Channel dissipation (Tc=25

Channel temperature

Storage temperature

)

Tch

150

Tstg

-55 to +150

* PW

10 ìs, duty cycle

www.kexin.com.cn

中文翻译

下载PDF

与2SJ181S相关器件

型号	品牌	获取价格	描述	数据表
2SJ181STL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ181STR-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ182	HITACHI	获取价格	Silicon P-Channel MOS FET
2SJ182(L)	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 3A I(D) \| TO-251VAR
2SJ182(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 3A I(D) \| TO-252VAR
2SJ182(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 3A I(D), 60V, 0.55ohm, 1-Element, P-Channel, Silicon, Metal
2SJ182L	HITACHI	获取价格	SILICON SPEED POWER SWITCHING
2SJ182S	HITACHI	获取价格	SILICON SPEED POWER SWITCHING
2SJ183	TOSHIBA	获取价格	TRANSISTOR 5 A, 60 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SJ183TE16R	TOSHIBA	获取价格	TRANSISTOR 5 A, 60 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power