是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.1 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ186 | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ186 | HITACHI |
获取价格 |
Silicon P-Channel MOS FET | |
2SJ186CY | HITACHI |
获取价格 |
0.5A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ186CYEL-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ186CYTL | RENESAS |
获取价格 |
0.5A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ186CYTL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ186CYTR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ186CYUL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ186CYUR | RENESAS |
获取价格 |
0.5A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ186CYUR | HITACHI |
获取价格 |
0.5A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET |