生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 0.95 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 20 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ194FA | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252VAR |
获取价格 |
|
2SJ194TL | ONSEMI | Power Field-Effect Transistor, 2A I(D), 100V, 0.95ohm, 1-Element, P-Channel, Silicon, Meta |
获取价格 |
|
2SJ195 | SANYO | Very High-Speed Switching Applications |
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|
2SJ195FA | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 4A I(D) | TO-252VAR |
获取价格 |
|
2SJ195-TL | ONSEMI | Power Field-Effect Transistor, 4A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal |
获取价格 |
|
2SJ196 | NEC | P-CHANNEL MOS FET FOR SWITCHING |
获取价格 |