生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
配置: | SINGLE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 0.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
功耗环境最大值: | 20 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ191FA | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR |
获取价格 |
|
2SJ191TL | ONSEMI | Power Field-Effect Transistor, 2A I(D), 60V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal |
获取价格 |
|
2SJ191-TL | ONSEMI | 2000mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
获取价格 |
|
2SJ192 | SANYO | Very High-Speed Switching Applications |
获取价格 |
|
2SJ192FA | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR |
获取价格 |
|
2SJ192TL | ONSEMI | Power Field-Effect Transistor, 4A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal- |
获取价格 |