是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SC-62 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.26 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 0.5 A |
最大漏极电流 (ID): | 0.5 A | 最大漏源导通电阻: | 15 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ186CYTL | RENESAS |
获取价格 |
0.5A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ186CYTL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ186CYTR | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ186CYUL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 0.5A I(D), 200V, 12ohm, 1-Element, P-Channel, Silicon, Meta | |
2SJ186CYUR | RENESAS |
获取价格 |
0.5A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ186CYUR | HITACHI |
获取价格 |
0.5A, 200V, 12ohm, P-CHANNEL, Si, POWER, MOSFET | |
2SJ187 | SANYO |
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Very High-Speed Switching Applications | |
2SJ187(JA)TD | ONSEMI |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 30V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal | |
2SJ188 | SANYO |
获取价格 |
Very High-Speed Switching Applications | |
2SJ188FA | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 2A I(D) | TO-252VAR |