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2SJ185 PDF预览

2SJ185

更新时间: 2024-11-20 06:23:23
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关光电二极管
页数 文件大小 规格书
1页 45K
描述
MOS Fied Effect Transistor

2SJ185 数据手册

  
SMD Type  
MOSFET  
MOS Fied Effect Transistor  
2SJ185  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Features  
3
Directly driven by Ics having a 3V poer supply.  
Not necessary to consider driving current because of its high  
input impedance.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
Possible to reduce the number of parts by omitting the bias resistor  
1 GATE  
2 SOURCE  
3 DRAIN  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage VGS=0  
Gate to source voltage VDS=0  
Drain current (DC)  
Symbol  
VDSS  
VGSS  
ID  
Rating  
-50  
Unit  
V
V
7.0  
mA  
mA  
mW  
100  
Drain current(pulse) *  
ID  
200  
Power dissipation  
PD  
200  
Operating temperature  
Storage temperature  
Topt  
Tstg  
-55 to +80  
-55 to +150  
* PW  
10 ms; d  
50%.  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Symbol  
Testconditons  
VDS=-50V,VGS=0  
Min  
Typ  
Max  
-10  
5
Unit  
A
IDSS  
IGSS  
Gate leakage current  
Gate cut-off voltage  
VGS= 7.0V,VDS=0  
VDS=-3V,ID=-1  
A
VGS(off)  
Yfs  
-1.2  
20  
-1.6  
42  
25  
13  
22  
12  
4
-2.0  
V
A
Forward transfer admittance  
VDS=-3V,ID=-10mA  
VGS=-2.5V,ID=-1mA  
VGS=-4.0V,ID=-10mA  
ms  
40  
20  
Drain to source on-state resistance  
RDS(on)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=-3V,VGS=0,f=1MHZ  
80  
230  
40  
70  
VGS(on)=-3V,RG=10 ,VDD=-3V,ID=-  
20mA RL=150  
Turn-off delay time  
Fall time  
td(off)  
tf  
Marking  
Marking  
H12  
1
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