Datasheet > 2SJ168W

2SJ168W

更新时间： 2024-11-20 11:46:23

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
4页	410K
描述
Ultrahigh-Speed Switching Applications

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中文翻译

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2SJ168W 数据手册

2SJ168W

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit : mm

•

Low ON-state resistance.

^•Ultrahigh-speed switching.

2167A

•

1.8V drive.

2SJ168W

0.3

0.15

N-Channel Silicon MOSFET

0.65

2.0

1 : Gate

2 : Source

3 : Drain

SOT-323

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

±10

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm²✕0.8mm)

°C

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=1mA, V =0

µA

(BR)DSS

D GS

=20V, V =0

±10

1.3

DSS

=±8V, V =0

GSS

(off)

=10V, I =1mA

0.4

3.9

Forward Transfer Admittance

yfs

=10V, I =1.5A

5.6

(on)1

=1.5A, V =4V

mΩ

Static Drain-to-Source On-State Resistance

(on)2

(on)3

=1A, V =2.5V

=0.5A, V =1.8V

110

Marking : KF

Continued on next page.

2007-11-01

12 3 4

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