Datasheet > 2SJ167_07

2SJ167_07

更新时间： 2024-11-20 03:56:39

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	516K
描述
Silicon P Channel MOS Type

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中文翻译

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数据手册

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2SJ167_07 数据手册

2SJ167

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ167

High Speed Switching Applications

Unit: mm

Analog Switch Applications

Interface Applications

•

Excellent switching time: t = 14 ns (typ.)

High forward transfer admittance: |Y | = 100 mS (min)

Low on resistance: R

Enhancement-mode

= 1.3 Ω (typ.)

DS (ON)

Complementary to 2SK1061

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−60

±20

DSS

Gate-source voltage

GSS

−200

−800

300

Drain current

Pulse

JEDEC

JEITA

―

Drain power dissipation (Ta = 25°C)

Channel temperature

°C

stg

150

TOSHIBA

2-4E1E

Storage temperature range

−55~150

°C

Weight: 0.13 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5

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