Datasheet > 2SD2583

2SD2583

更新时间： 2024-11-18 12:54:39

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页数	文件大小	规格书
1页	126K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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2SD2583 数据手册

RoHS

2SD2583

2SD2583 TRANSISTOR (NPN)

TO-126

FEATURES

Power dissipation

P_CM:

W (Tamb=25℃)

1. EMITTER

2. COLLECTOR

3. BASE

Collector current

I_CM:

1 2 3

Collector-base voltage

V_(BR)CBO

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=0.1mA, I_E=0

Ic=1mA, I_B=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=0.1mA, I_C=0

µA

V_CB=30V, I_E=0

0.1

600

I_EBO

Emitter cut-off current

V_EB=6V, I_C=0

h_FE(1)

V_CE=2V, I_C=1A

150

DC current gain

h_FE(2)

V_CE=2V, I_C=4A

I_C=1A, I_B=50mA

I_C=2A, I_B=100mA

0.15

0.25

0.5

V_CE(sat)

Collector-emitter saturation voltage

I_C=4A, I_B=200mA

I_C=2A, I_B=100mA

V_BE(sat)

Base-emitter saturation voltage

Transition frequency

1.5

MHz

f_T

V_CE=10V, I_C=50mA

120

C_ob

Collector output capacitance

_CB=10V, I_E=0, f=1MHz

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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