Datasheet > 2SD2583

2SD2583

更新时间： 2024-11-18 12:52:59

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描述
NPN Silicon Epitaxial Power Transistor

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数据手册

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2SD2583 数据手册

2SD2583

Pb Free Plating Product

NPN Silicon Epitaxial Power Transistor

PACKAGE DIMENSIONS

in millimeters (inches)

FEATURES

•

Low V^CE(sat)

V^CE(sat)= 0.15 V Max (@l^C/l^B= 1.0 A/50 mA)

High DC Current Gain

8.5 MAX.

(0.334 MAX.)

2.8 MAX.

(0.110 MAX.)

•

3.2 ± 0.2 (φ 0.126)

h^EF= 150 to 600 (@V^CE= 2.0 V, l^C= 1.0 A)

ABSOLUTE MAXIMUM RATINGS

Maximum Voltage and Current (T^A= 25 °C)

1 2 3

Collector to Base Voltage

Collector to Emitter Volteage

Emitter to Base Voltage

V^CB0

30 V

6.0 V

5.0 A

10 A

2.0A

1.2

(0.047)

V^CE0

V^EB0

+0.08

0.55

−0.05

Collector Current (DC)

I^C(DC)

I^C(Pulse)

I^B(DC)

(0.021)

Collector Current (Pulse)*

Base Current (DC)

+0.08

0.8

−0.05

(0.031)

1.2

(0.047)

* PW ≤ 10ms, Duty Cycle ≤ 10 %

Maximum Power Dissipation

Total Power Dissipation (T^C= 25 °C)

Total Power Dissipation (T^A= 25 °C)

Maximum Temperature

2.3 2.3

(0.090) (0.090)

P^T

10 W

1.0 W

1. Emitter

Junction Temperature

T^j

150 °C

2. Collector connected to mounting plane

3. Base

Storage Temperature

T^stg

−55 to 150 °C

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTICS

Collector Cutoff Currnet

SYMBOL

ICB0

TEST CONDITIONS

VCB = 30 V, IE = 0

MIN.

TYP.

MAX.

100

UNIT

−

Emitter Cutoff Current

DC Current Gain

IEB0

VEB = 6.0 V, IC = 0

100

hFE1

VCE = 2.0 V, IC = 1.0 A

VCE = 2.0 V, IC = 4.0 A

IC = 1.0 A, IB = 50 mA

IC = 2.0 A, IB = 0.1 A

IC = 4.0 A, IB = 0.2 A

IC = 2.0 A, IB = 0.1 A

VCE = 10 V, IE = 50 mA

VCB = 10 V, IE = 0, f = 1 MHz

150

600

DC Current Gain

hFE2

−

Collector Saturation Voltage

Base Saturation Voltage

Gain Bandwidth Product

Output Capacitance

VCE(sat)1

VCE(sat)2

VCE(sat)3

VBE(sat)

0.07

0.13

0.24

0.86

120

0.15

0.25

0.50

1.50

MHz

Cob

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