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2SD1207S PDF预览

2SD1207S

更新时间： 2024-11-01 12:53:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
5页 56K
描述
PNP / NPN Epitaxial Planar Silicon Transistors

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中文翻译

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2SD1207S 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：CYLINDRICAL, O-PBCY-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
风险等级：5.29最大集电极电流 (IC)：2 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：140JEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL极性/信道类型：NPN
最大功率耗散 (Abs)：1 W子类别：Other Transistors
表面贴装：NO端子面层：Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
端子形式：THROUGH-HOLE端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

2SD1207S 数据手册

 浏览型号2SD1207S的Datasheet PDF文件第2页浏览型号2SD1207S的Datasheet PDF文件第3页浏览型号2SD1207S的Datasheet PDF文件第4页浏览型号2SD1207S的Datasheet PDF文件第5页 
Ordering number : EN930D  
SANYO Sem iconductors  
DATA S HEET  
PNP / NPN Epitaxial Planar Silicon Transistors  
2SB892 / 2SD1207  
Large-Current Switching Applications  
Applications  
• Power supplies, relay drivers, lamp drivers, and automotive wiring.  
Features  
• FBET and MBIT processed (Original process of SANYO).  
• Low saturation voltage.  
• Large current capacity and wide ASO.  
Specifications ( ) : 2SB892  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
(--)60  
(--)50  
(--)6  
(--)2  
(--)4  
1
CBO  
CEO  
EBO  
V
V
I
I
A
C
Collector Current (Pulse)  
Collector Dissipation  
A
CP  
P
W
°C  
°C  
C
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=(--)50V, I =0A  
Unit  
min  
max  
Collector Cutoff Current  
Emitter Cutoff Current  
I
I
V
V
(--)0.1  
(--)0.1  
μA  
μA  
CBO  
CB  
EB  
E
=(--)4V, I =0A  
EBO  
C
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
D0308EA MS IM TC-00001739 / 10904TN (KT)/91098HA (KT)/4067KI/3145KI No.930-1/5  
12345

中文翻译

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2SD1207S 替代型号

型号 品牌 替代类型 描述 数据表
NTE2363 NTE

类似代替

 Silicon Complementary Transistors High Current General Purpose Amp/Switch
2SC3279 SECOS

功能相似

 NPN Transistor Plastic-Encapsulate Transistors

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