是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.64 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 140 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 表面贴装: | NO |
端子面层: | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1207T | ONSEMI |
获取价格 |
Large-Current Switching Applications | |
2SD1207T-AE | ONSEMI |
获取价格 |
暂无描述 | |
2SD1207U | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-92VAR | |
2SD1208 | ISC |
获取价格 |
Silicon NPN Power Transistors | |
2SD1208 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD1209 | HITACHI |
获取价格 |
Silicon NPN Epitaxial, Darlington | |
2SD1209 | RENESAS |
获取价格 |
Silicon NPN Epitaxial, Darlington | |
2SD1209(K) | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 | |
2SD1209(K)RF | RENESAS |
获取价格 |
100mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD1209(K)RR | HITACHI |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon |