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2SD1212 PDF预览

2SD1212

更新时间: 2024-11-01 07:31:19
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页数 文件大小 规格书
4页 118K
描述
Silicon NPN Power Transistors

2SD1212 数据手册

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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1212  
DESCRIPTION  
·With TO-220 package  
·Low collector saturation voltage  
·Large current capacity.  
·Complement to type 2SB903  
APPLICATIONS  
·Suitable for relay drivers, high-speed  
inverters,converters, and other general  
large current switching applications.  
·High-speed switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
60  
UNIT  
V
V
V
A
A
Open base  
30  
Open collector  
6
12  
ICM  
Collector current-peak  
20  
1.75  
35  
PC  
Collector power dissipation  
W
TC=25  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
Tstg  

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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 12A I(C) | TO-220
2SD1212R ETC

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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 12A I(C) | TO-220
2SD1212S ETC

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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 12A I(C) | TO-220
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2SD1213Q ETC

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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20A I(C) | TO-218VAR
2SD1213R ETC

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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20A I(C) | TO-218VAR
2SD1213S ETC

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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20A I(C) | TO-218VAR