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2SD1208 PDF预览

2SD1208

更新时间: 2024-11-01 07:31:19
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 38K
描述
Silicon NPN Power Transistors

2SD1208 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.6
Base Number Matches:1

2SD1208 数据手册

 浏览型号2SD1208的Datasheet PDF文件第2页浏览型号2SD1208的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1208  
DESCRIPTION  
·With TO-3 package  
·Wide area of safe operation  
·High DC current gain  
·Darlington  
APPLICATIONS  
·Power regulator for line  
operated TV  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings (Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALUE  
60±15  
60±15  
6
UNIT  
V
Open base  
V
Open collector  
V
Collector current (DC)  
Collector current (Pulse)  
Collector power dissipation  
Junction temperature  
Storage temperature  
5
A
ICP  
20  
A
PC  
TC=25℃  
100  
W
Tj  
150  
Tstg  
-65~150  

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