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2SD1211S PDF预览

2SD1211S

更新时间: 2024-10-31 23:20:23
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 64K
描述
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-51

2SD1211S 数据手册

 浏览型号2SD1211S的Datasheet PDF文件第2页浏览型号2SD1211S的Datasheet PDF文件第3页 
Transistor  
2SD1211  
Silicon NPN epitaxial planer type  
For low-frequency amplification  
Unit: mm  
Complementary to 2SB0987 (2SB987)  
5.9 0.2  
4.9 0.2  
Features  
High collector to emitter voltage VCEO  
I
G
.
G
Optimum for the driver-stage of a low-frequency and 40 to 60W  
output amplifier.  
0.7 0.1  
2.54 0.15  
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
120  
120  
V
0.45+–0.21  
0.45+00..12  
1.27  
1.27  
5
V
1:Emitter  
1
A
2:Collector  
3:Base  
1
2
3
IC  
0.5  
1
A
EIAJ:SC–51  
TO–92L Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
VCEO  
Conditions  
min  
120  
5
typ  
max  
Unit  
V
Collector to emitter voltage  
Emitter to base voltage  
IC = 0.1mA, IB = 0  
IE = 10µA, IC = 0  
CE = 10V, IC = 150mA  
VEBO  
V
*
hFE1  
V
130  
50  
330  
Forward current transfer ratio  
hFE2  
VCE = 5V, IC = 500mA  
IC = 300mA, IB = 30mA  
IC = 300mA, IB = 30mA  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
1
V
V
1.2  
Transition frequency  
fT  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
200  
MHz  
pF  
Collector output capacitance  
Cob  
20  
*hFE1 Rank classification  
Rank  
hFE1  
R
S
130 ~ 220  
185 ~ 330  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

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