是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.85 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 150 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1220(2-7J1A) | TOSHIBA |
获取价格 |
TRANSISTOR 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP | |
2SD1220_06 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) | |
2SD1220_10 | TOSHIBA |
获取价格 |
Power Amplifier Applications | |
2SD1220O | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-251AA | |
2SD1220-O(2-7B1A) | TOSHIBA |
获取价格 |
TRANSISTOR 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP | |
2SD1220-O(2-7B2A) | TOSHIBA |
获取价格 |
TRANSISTOR 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sig | |
2SD1220-O(2-7J1A) | TOSHIBA |
获取价格 |
TRANSISTOR 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP | |
2SD1220O(SM) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,150V V(BR)CEO,1.5A I(C),TO-252AA | |
2SD1220R | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1.5A I(C) | TO-251AA | |
2SD1220-R(2-7B1A) | TOSHIBA |
获取价格 |
TRANSISTOR 1500 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP |