Datasheet > 2SD1221_15

2SD1221_15

更新时间： 2024-11-03 01:19:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1335K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1221_15 数据手册

SMD Type

Transistors

NPN Transistors

2SD1221

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

■ Features

5.30

-0.2

0.50

● Low collector saturation voltage

: V^{CE (sat)}= 0.4 V (typ.) (I

● High power dissipation: P

● Complementary to 2SB906

= 3 A, I

B = 0.3 A)

= 20 W (Tc = 25°C)

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

0.5

Collector Power Dissipation

Ta = 25℃

Tc = 25℃

℃

Junction Temperature

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 50 mA， I = 0

= 100μA， I = 0

CB= 60 V , I = 0

^EB= 7V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitte voltage

CE(sat)

BE(sat)

=3 A, I

=300mA

0.4

0.7

C=3 A, I

1.2

CE= 5V, I

C= 500mA

C= 3 A

FE(1)

FE(2)

300

DC current gain

Turn-on time

0.8

1.5

0.8

See specified Test Circuit

Storage time

stg

Fall time

Collector output capacitance

Transition frequency

CB= 10V, I

E= 0,f=1MHz

CE= 5V, I = 500mA

MHz

■ Classification of hfe(1)

Type

2SD1221-O

2SD1221-Y

100-200

2SD1221-G

150-300

Range

60-120

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