Datasheet > 2SD1220Y

2SD1220Y

更新时间： 2024-10-31 23:20:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
5页	118K
描述
TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 1.5A I(C) \| TO-251AA

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中文翻译

获取价格

数据手册

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2SD1220Y 数据手册

2SD1220

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SD1220

Power Amplifier Applications

Unit: mm

Complementary to 2SB905

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

150

CBO

CEO

EBO

1.5

Base current

1.0

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

Junction temperature

150

°C

Storage temperature range

−55 to 150

stg

JEDEC

JEITA

―

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2002-07-23

12 3 4 5

中文翻译

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2SD1220Y(SM)	TOSHIBA	获取价格	TRANSISTOR,BJT,NPN,150V V(BR)CEO,1.5A I(C),TO-252AA
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