是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.41 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1221-Y(2-7J1A) | TOSHIBA |
获取价格 |
TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Pur | |
2SD1222 | TOSHIBA |
获取价格 |
NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIO | |
2SD1222(2-7B2A) | TOSHIBA |
获取价格 |
TRANSISTOR 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
2SD1222(2-7J1A) | TOSHIBA |
获取价格 |
TRANSISTOR 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Pur | |
2SD1222(SM) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,DARLINGTON,NPN,40V V(BR)CEO,3A I(C),TO-252VAR | |
2SD1222_10 | TOSHIBA |
获取价格 |
Switching Applications | |
2SD1223 | TOSHIBA |
获取价格 |
NPN EPITAXIAL TYPE (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE, POWER AMPLIFIER APPLICATIO | |
2SD1223(2-7B1A) | TOSHIBA |
获取价格 |
TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7B1A, 3 PIN, BIP General Pur | |
2SD1223(2-7J1A) | TOSHIBA |
获取价格 |
TRANSISTOR 4000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Pur | |
2SD1223_10 | TOSHIBA |
获取价格 |
Switching Applications |