Datasheet > 2SD1224_06

2SD1224_06

更新时间： 2024-10-01 07:31:23

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器脉冲
页数	文件大小	规格书
5页	150K
描述
Pulse Motor Drive, Hammer Drive Applications

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中文翻译

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数据手册

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2SD1224_06 数据手册

2SD1224

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)

2SD1224

Pulse Motor Drive, Hammer Drive Applications

Unit: mm

Switching Applications

Power Amplifier Applications

•

High DC current gain: h

= 4000 (min) (V

= 2 V, I = 150 mA)

CE C

Low saturation voltage: V

= 1.5 V (max) (I = 1 A, I = 1 mA)

C B

CE (sat)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

1.5

0.15

1.0

Base current

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-7B1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Equivalent Circuit

COLLECTOR

EMITTER

BASE

2006-11-21

12 3 4 5

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