是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 包装说明: | LEAD FREE, 2-7B1A, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.51 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 30 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 4000 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1224_06 | TOSHIBA |
获取价格 |
Pulse Motor Drive, Hammer Drive Applications | |
2SD1225 | ROHM |
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2SD1225 | |
2SD1225M | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1225M/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1225M/PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1225M/PR | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1225M/Q | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1225M/R | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1225MC2 | ROHM |
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Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
2SD1225MC2/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon |