Datasheet > 2SD1221Y(2-7B1A)

2SD1221Y(2-7B1A)

更新时间： 2024-11-03 04:28:51

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	153K
描述
TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal

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数据手册

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2SD1221Y(2-7B1A) 数据手册

2SD1221

TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)

2SD1221

Audio Frequency Power Amplifier Application

Unit: mm

•

Low collector saturation voltage

: V = 4.0 V (typ.) (I = 3 A, I = 0.3 A)

CE (sat)

•

High power dissipation: P = 20 W (Tc = 25°C)

Complementary to 2SB906

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

0.5

Base current

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

Junction temperature

150

°C

JEDEC

JEITA

―

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

JEDEC

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2006-11-21

12 3 4

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