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2SD1221-O(2-7J1A) PDF预览

2SD1221-O(2-7J1A)

更新时间: 2024-02-07 09:56:44
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器晶体管
页数 文件大小 规格书
4页 107K
描述
TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7J1A, 3 PIN, BIP General Purpose Small Signal

2SD1221-O(2-7J1A) 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Lifetime Buy包装说明:2-7J1A, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.72外壳连接:COLLECTOR
最大集电极电流 (IC):3 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):60
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:NOT SPECIFIED
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

2SD1221-O(2-7J1A) 数据手册

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2SD1221  
TOSHIBA Transistor Silicon NPN Diffused Type (PCT process)  
2SD1221  
Audio Frequency Power Amplifier Application  
Unit: mm  
·
Low collector saturation voltage  
: V = 4.0 V (typ.) (I = 3 A, I = 0.3 A)  
CE (sat)  
C
B
·
·
High power dissipation: P = 20 W (Tc = 25°C)  
Complementary to 2SB906  
C
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
60  
V
V
V
A
A
CBO  
CEO  
EBO  
60  
7
I
3
0.5  
C
Base current  
I
B
Ta = 25°C  
1.0  
Collector power  
P
W
C
dissipation  
Tc = 25°C  
20  
JEDEC  
JEITA  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
55 to 150  
stg  
TOSHIBA  
2-7B1A  
Weight: 0.36 g (typ.)  
JEDEC  
JEITA  
TOSHIBA  
2-7J1A  
Weight: 0.36 g (typ.)  
1
2002-07-23  

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