2SD1221-O

更新时间： 2024-02-23 13:54:28

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数据手册
替代型号

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2SD1221-O 数据手册

2SD1221

TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)

2SD1221

Audio Frequency Power Amplifier Application

Unit: mm

•

Low collector saturation voltage

: V = 0.4 V (typ.) (I = 3 A, I = 0.3 A)

CE (sat)

•

High power dissipation: P = 20 W (Tc = 25°C)

Complementary to 2SB906

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

0.5

Base current

Ta = 25°C

Tc = 25°C

1.0

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

stg

−55 to 150

TOSHIBA

2-7J1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.36 g (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-05-19

12 3 4

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2SD1221-O 替代型号

型号	品牌	替代类型	描述	数据表
2SD1221-Y	TOSHIBA	功能相似	TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
2SD1221-GR	TOSHIBA	功能相似	TRANSISTOR 3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign

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