Datasheet > 2SD1220

2SD1220

更新时间： 2024-11-01 12:53:43

品牌	Logo	应用领域
TYSEMI		晶体放大器晶体管功率放大器
页数	文件大小	规格书
1页	123K
描述
Power Amplifier Applications Collector-base voltage VCBO 150 V

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中文翻译

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2SD1220 数据手册

SSMMDD TTyyppee

Product specification

2SD1220

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Power Amplifier Applications

0.127

max

0.80^+0.1

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

150

1.5

Base current

I^B

Collector power dissipation Ta = 25

Tc = 25

P^C

Junction temperature

Storage temperature range

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

Symbol

I^CBO

Testconditons

Min

Typ

Max

1.0

Unit

ìA

V^CB= 150 V, I^E= 0

I^EBO

V^EB= 6 V, I^C= 0

1.0

Collector-emitter breakdown voltage

DC current gain

V ^{(BR) CEO}

h^FE

V^{CE (sat)}

V^BE

I^C= 10 mA, I^B= 0

150

V^CE= 5 V, ^IC= 200 mA

I^C= 500 mA, I^B= 50 mA

V^CE= 5 V, I^C= 5 mA

V^CE= 5 V, I^C= 200 mA

320

1.5

0.8

Collector-emitter saturation voltage

Base-emitter voltage

0.5

Transition frequency

f^T

100

MHz

Collector output capacitance

C^ob

V^CB= 10 V, I^E= 0, f = 1 MHz

hFE Classification

D1220

Marking

Rank

hFE

60 to 120

100 to 200

160 to 320

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