Datasheet > 2SC3279

2SC3279

更新时间： 2024-01-11 15:10:21

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	308K
描述
NPN Transistor Plastic-Encapsulate Transistors

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中文翻译

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技术参数
数据手册
替代型号

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2SC3279 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.68	Is Samacsys：	N
Base Number Matches：	1

2SC3279 数据手册

2SC3279

NPN Transistor

Elektronische Bauelemente

Plastic-Encapsulate Transistors

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

FEATURES

4.55±0.2

3.5 0.2

(1.27 Typ.)

1.25⁺–0⁰.^.2²

High DC current gain and excellent hFE linearity

Low saturation voltage

2 3

2.54 0.1

1: Emitter

2: Collector

3: Base

+0.08

–0.07

0.43

46^+0.1

–0.1

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

Collector Current Continuous

Collector Power Dissipation

Junction, Storage Temperature

I_C

750

°C

P_C

150, -55~150

T_J, T_STG

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test Conditions

I_C= 1mA, I_E= 0

Min

Typ Max Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C= 10mA, I_B= 0

I_E= 1mA, I_C= 0

V_CB= 30V, I_E= 0

0.1

V_EB= 6V, I_C= 0

Emitter Cut-off Current

0.1

I_EBO

V_CE= 1V, I_C= 0.5A

I_C= 2A, I_B= 100mA

I_C= 2A, V_CE= 1V

V_CB= 10V, I_E= 0, f = 1MHz

V_CE= 1V, I_C= 0.5A

DC Current Gain

140

600

h_FE

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

0.82

1.5

V_CE(sat)

V_BE

Collector Power Dissipation

Transition Frequency

C_ob

150

MHz

f_T

CLASSIFICATION OF hFE

Rank

200-330

140-240

300-450

420-600

Range

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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2SC3279 替代型号

型号	品牌	替代类型	描述	数据表
2SD1207S	ONSEMI	功能相似	PNP / NPN Epitaxial Planar Silicon Transistors
KSC2500	FAIRCHILD	功能相似	Medium Power Amplifier & Low Saturation
NTE2363	NTE	功能相似	Silicon Complementary Transistors High Current General Purpose Amp/Switch

与2SC3279相关器件

型号	品牌	获取价格	描述	数据表
2SC3279_07	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications
2SC3279_11	SECOS	获取价格	NPN Plastic Encapsulated Transistor
2SC3279-B	MCC	获取价格	Transistor
2SC3279-BP	MCC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, PL
2SC3279L	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 2A I(C) \| TO-92
2SC3279-L	MCC	获取价格	NPN Silicon Epitaxial Transistors
2SC3279-L-A	MCC	获取价格	暂无描述
2SC3279-L-AP	MCC	获取价格	Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, RO
2SC3279-L-AP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SC3279-L-BP	MCC	获取价格	暂无描述