Datasheet > 2SC3279_11

2SC3279_11

更新时间： 2024-09-13 07:30:39

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	293K
描述
NPN Plastic Encapsulated Transistor

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数据手册

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2SC3279_11 数据手册

2SC3279

2A , 30V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURES

ꢀ

High DC current gain and excellent h_FElinearity.

Low saturation voltage.

ꢀ

1Emitter

2Collector

3Base

CLASSIFICATION OF h_FE

Millimeter

REF.

Product-Rank 2SC3279-L 2SC3279-M 2SC3279-N 2SC3279-P

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

0.51

Range 140~240 200~330 300~450 420~600

1.27 TYP.

1.10

2.42

0.36

2.66

0.76

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

P_C

0.75

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

Emitter Cut – Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=1mA, I_E=0

I_C=10mA, I_B=0

I_E=1mA, I_C=0

0.1

600

0.82

1.5

µA

V_CB=30V, I_E=0

I_EBO

V_EB=6V, I_C=0

DC Current Gain

h_FE

140

V_CE=1V, I_C=500mA

I_C=2A, I_B=100mA

V_CE=1V, I_C=2A

V_CB=10V, I_E=0, f=1MHz

Collector to Emitter Saturation Voltage

Base to Emitter voltage

V_CE(sat)

V_BE

Collector Output Capacitance

Transition Frequency

C_ob

150

f_T

MHz V_CE=1V, I_C=0.5A

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Feb-2011 Rev. B

Page 1 of 2

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