Datasheet > 2SC3279P

2SC3279P

更新时间： 2024-11-22 23:20:15

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数据手册

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2SC3279P 数据手册

M C C

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2SC3279

Features

High DC Current Gain and excellent h_FELinearity

h_FE(1)=140-600 (V_CE=1.0V, I_C=0.5A)

h_FE(2)=70 (Min.), 200 (Typ.) (V_CE=1.0V, I_C=2.0A)

NPN Silicon

Epitaxial Transistors

Pin Configuration

Bottom View

TO-92

Maximum Ratings

Symbol

V_CEO

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - DC

Pulsed ⁽¹⁾

Rating

6.0

Unit

V_CES

V_CBO

V_EBO

2.0

5.0

I_C

I_B

P_C

T_J

Base Current

0.2

750

-55 to +150

Collector power dissipation

Junction Temperature

Storage Temperature

^OC

T_STG

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector-Emitter Voltage

---

Vdc

(I =10mAdc, I_B=0)

Collector-Emitter Voltage

6.0

---

Vdc

(I =1.0mAdc, I_C=0)

Collector Cutoff Current

0.1

uAdc

(V_CB=30Vdc,I =0)

I_EBO

Emitter Cutoff Current

---

0.1

uAdc

(V_EB=6.0Vdc, I =0)

ON CHARACTERISTICS

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

DC Current Gain⁽²⁾

---

(I =0.5Adc, V_CE=1.0Vdc)

DC Current Gain

140

---

200

0.2

600

---

DIMENSIONS

(I =2.0Adc, V_CE=1.0Vdc)

INCHES

MIN

.175

MIN

DIM

MAX

4.70

---

NOTE

Collector Saturation Voltage

(I =2.0Adc, I =50mAdc)

.185

---

4.45

4.46

12.7

0.41

3.43

2.42

Vdc

MHz

0.5

1.5

---

.175

.500

Base Saturation Voltage

.016

.020

.145

.105

0.63

3.68

2.67

(I =2.0Adc, V_CE=1.0Vdc)

0.86

150

.135

.095

f_T

Transition Frequency

(V_CE=1.0Vdc, I =0.5Adc)

C_ob

Collector Output Capacitance

(V_CB=10Vdc, I =0, f=1.0MHz)

---

(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)

(2) h_FE(1)Classification L: 140-240, M: 200-330, N: 300-450, P: 420-600

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