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2SC3279P-BP PDF预览

2SC3279P-BP

更新时间: 2024-11-24 07:16:39
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
3页 313K
描述
2000mA, 10V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

2SC3279P-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:compliant风险等级:5.62
最大集电极电流 (IC):2 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):420
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz

2SC3279P-BP 数据手册

 浏览型号2SC3279P-BP的Datasheet PDF文件第2页浏览型号2SC3279P-BP的Datasheet PDF文件第3页 
2SC3279-L  
2SC3279-M  
2SC3279-N  
2SC3279-P  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
High DC Current Gain and excellent hFE Linearity  
hFE(1) =140-600 (VCE=1.0V, IC=0.5A)  
hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
NPN Silicon  
Epitaxial Transistors  
·
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
TO-92  
·
Halogen free available upon request by adding suffix "-HF"  
A
E
Maximum Ratings  
Symbol  
Rating  
Rating  
10  
30  
30  
6.0  
Unit  
V
V
V
V
VCEO  
VCES  
VCBO  
VEBO  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current - DC  
Pulsed (1)  
B
2.0  
5.0  
IC  
A
IB  
PC  
TJ  
Base Current  
0.2  
750  
-55 to +150  
-55 to +150  
A
Collector power dissipation  
Junction Temperature  
Storage Temperature  
mW  
OC  
OC  
C
TSTG  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-Emitter Voltage  
10  
---  
---  
Vdc  
(I =10mAdc, IB=0)  
C
D
Collector-Emitter Voltage  
6.0  
---  
---  
---  
---  
Vdc  
(I =1.0mAdc, IC=0)  
E
Collector Cutoff Current  
0.1  
uAdc  
(VCB=30Vdc,I =0)  
E
IEBO  
Emitter Cutoff Current  
---  
---  
0.1  
uAdc  
E
E
C
(VEB=6.0Vdc, I =0)  
C
B
C
B
ON CHARACTERISTICS  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
DC Current Gain(2)  
G
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
---  
---  
(I =0.5Adc, VCE=1.0Vdc)  
DC Current Gain  
140  
70  
---  
200  
0.2  
600  
---  
C
DIMENSIONS  
(I =2.0Adc, VCE=1.0Vdc)  
INCHES  
MM  
C
DIM  
A
B
C
D
MIN  
.175  
.175  
.500  
.016  
.135  
.095  
.173  
MAX  
.185  
.185  
---  
.020  
.145  
.105  
.220  
MIN  
4.45  
4.45  
12.70  
0.41  
3.43  
2.42  
4.40  
MAX  
4.70  
4.70  
---  
0.63  
3.68  
2.67  
5.60  
NOTE  
Collector Saturation Voltage  
(I =2.0Adc, I =50mAdc)  
Vdc  
Vdc  
MHz  
pF  
---  
0.5  
1.5  
---  
C
B
Base Saturation Voltage  
(I =2.0Adc, VCE=1.0Vdc)  
---  
0.86  
150  
27  
C
E
fT  
Transition Frequency  
Straight Lead  
Bent Lead  
G
(VCE=1.0Vdc, I =0.5Adc)  
100  
C
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
Cob  
Collector Output Capacitance  
(VCB=10Vdc, I =0, f=1.0MHz)  
---  
---  
E
(1) Pulse Width=10 ms (Max.), Duty Cycle=30% (Max.)  
(2) hFE(1) Classification L: 140-240, M: 200-330, N: 300-450, P: 420-600  
www.mccsemi.com  
1 of 3  
Revision: D  
2013/01/01  

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