Datasheet > 2SC3284_07

2SC3284_07

更新时间： 2024-11-06 12:20:31

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	34K
描述
Silicon NPN Epitaxial Planar Transistor

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中文翻译

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数据手册

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2SC3284_07 数据手册

LAP T 2 S C3 2 8 4

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303)

Application : Audio and General Purpose

(Ta=25°C)

■Absolute maximum ratings

■Electrical Characteristics

External Dimensions MT-100(TO3P)

(Ta=25°C)

Symbol

V^CBO

VCEO

VEBO

Symbol

I^CBO

Ratings

100max

150min

50min

Ratings

Conditions

Unit

µA

Unit

±0.2

4.8

±0.4

15.6

±0.1

2.0

9.6

150

V^CB=150V

IEBO

150

V^EB=5V

V(BR)CEO

hFE

I^C=25mA

±0.1

ø3.2

V^CE=4V, IC=5A

I^C=5A, IB=0.5A

V^CE=12V, IE=–2A

V^CB=10V, f=1MHz

MHz

VCE(sat)

2.0max

60typ

125(Tc=25°C)

150

°C

COB

200typ

+0.2

-0.1

+0.2

-0.1

Tstg

hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

1.05

0.65

1.4

–55 to +150

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 6.0g

a. Part No.

R^L

(Ω)

VBB1

(V)

V^BB2

(V)

I^B1

(A)

I^B2

(A)

ton

(µs)

V^CC

(V)

I^C

(A)

tstg

(µs)

b. Lot No.

–5

0.5

–0.5

0.2typ

0.35typ

1.5typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

IC=10A

I^B=20mA

0.2

0.4

0.6

0.8

1.0

Collector-Emitter Voltage V^CE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

200

100

200

125˚C

100

25˚C

Typ

–30˚C

0.5

0.02

0.1

100

Time t(ms)

1000 2000

0.1

0.5

10 14

0.1

0.5

10 14

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

130

100

Typ

Without Heatsink

Natural Cooling

0.5

Without Heatsink

3.5

0.2

–0.02

–0.1

–1

–10

100

200

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

中文翻译

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