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2SC3279_07

更新时间： 2024-09-13 04:25:59
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东芝 - TOSHIBA 闪光灯PC
页数 文件大小 规格书
3页 336K
描述
Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications

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2SC3279_07 数据手册

 浏览型号2SC3279_07的Datasheet PDF文件第2页浏览型号2SC3279_07的Datasheet PDF文件第3页 
2SC3279  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)  
2SC3279  
Strobe Flash Applications  
Medium Power Amplifier Applications  
Unit: mm  
•
High DC current gain and excellent h  
linearity  
FE  
: h  
: h  
= 140~600 (V  
= 1 V, I = 0.5 A)  
FE (1)  
FE (2)  
CE C  
= 70 (min), 200 (typ.) (V  
= 1 V, I = 2 A)  
C
CE  
•
Low saturation voltage: V  
= 0.5 V (max)  
CE (sat)  
(I = 2 A, I = 50 mA)  
C
B
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
30  
30  
10  
6
CBO  
V
CES  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
V
V
V
V
DC  
I
2
C
Collector current  
A
Pulsed  
I
5
CP  
(Note 1)  
Base current  
I
0.2  
750  
A
mW  
°C  
JEDEC  
JEITA  
TO-92  
B
Collector power dissipation  
Junction temperature  
P
C
SC-43  
T
150  
j
TOSHIBA  
2-5F1B  
Storage temperature range  
T
stg  
−55~150  
°C  
Weight: 0.21 g (typ.)  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 30 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
10  
6
⎯
⎯
⎯
⎯
0.1  
0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 6 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
V
V
I
I
= 10 mA, I = 0  
B
(BR) CEO  
(BR) EBO  
C
E
= 1 mA, I = 0  
⎯
V
C
h
FE (1)  
V
V
= 1 V, I = 0.5 A  
140  
⎯
600  
CE  
C
DC current gain  
(Note 2)  
h
= 1 V, I = 2 A  
70  
⎯
⎯
⎯
⎯
200  
0.2  
⎯
0.5  
1.5  
⎯
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= 2 A, I = 50 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= 1 V, I = 2 A  
0.86  
150  
27  
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= 1 V, I = 0.5 A  
MHz  
pF  
T
C
Collector output capacitance  
C
= 10 V, I = 0, f = 1 MHz  
⎯
ob  
E
Note 2:  
h
classification L: 140~240, M: 200~330, N: 300~450, P: 420~600  
FE (1)  
1
2007-11-01  
123

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