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KSC2500 PDF预览

KSC2500

更新时间: 2024-11-23 04:21:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管功率放大器
页数 文件大小 规格书
4页 40K
描述
Medium Power Amplifier & Low Saturation

KSC2500 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-92L包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

KSC2500 数据手册

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KSC2500  
Medium Power Amplifier & Low Saturation  
TO-92L  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
* Collector Current (Pulse)  
Base Current  
30  
V
V
CBO  
30  
CES  
CEO  
EBO  
10  
V
6
V
I
I
I
2
5
A
C
A
CP  
B
0.5  
A
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
900  
mW  
°C  
°C  
C
T
150  
J
T
-55 ~ 150  
STG  
* PW10ms, Duty Cycle30%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
100  
Units  
I
I
V
V
=30V, I =0  
nA  
nA  
V
CBO  
EBO  
CB  
EB  
E
=6V, I =0  
100  
C
BV  
BV  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
I =10mA, I =0  
10  
6
CBO  
EBO  
C
B
I =1mA, I =0  
V
E
C
h
h
V
V
=1V, I =0.5A  
140  
70  
600  
FE 1  
FE 2  
CE  
CE  
C
=1V, I =2A  
200  
0.2  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =2A, I =50mA  
0.5  
1.5  
V
V
CE  
C
B
V
=1V, I =2A  
0.86  
150  
27  
BE  
CE  
CE  
CB  
C
f
Current Gain Bandwidth Product  
Output Capacitance  
V
V
=1V, I =0.5A  
MHz  
pF  
T
C
C
=10V, I =0, f=1MHz  
ob  
E
h
Classification  
FE1  
Classification  
A
B
C
D
h
140 ~ 240  
200 ~ 330  
300 ~ 450  
420 ~ 600  
FE1  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

KSC2500 替代型号

型号 品牌 替代类型 描述 数据表
2SC3279 SECOS

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与KSC2500相关器件

型号 品牌 获取价格 描述 数据表
KSC2500A FAIRCHILD

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Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
KSC2500-A SAMSUNG

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暂无描述
KSC2500-B SAMSUNG

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KSC2500BBU FAIRCHILD

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Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
KSC2500BTA FAIRCHILD

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Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
KSC2500C FAIRCHILD

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Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
KSC2500-C SAMSUNG

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Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO
KSC2500CBU FAIRCHILD

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暂无描述
KSC2500CTA FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3
KSC2500D FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3