是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-92L | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.81 | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 10 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 300 | JESD-30 代码: | O-PBCY-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.9 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2500-C | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO |
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KSC2500CBU | FAIRCHILD |
获取价格 |
暂无描述 |
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KSC2500CTA | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 |
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KSC2500D | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 |
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KSC2500-D | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO |
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KSC2500DBU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 |
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KSC2500DTA | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92L, 3 |
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KSC2517 | SAMSUNG |
获取价格 |
NPN (HIGH SPEED SWITCHING INDUSTRIAL USE) |
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KSC2517-O | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2517OJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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