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KSC2517YJ69Z PDF预览

KSC2517YJ69Z

更新时间: 2024-11-23 14:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 47K
描述
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC2517YJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KSC2517YJ69Z 数据手册

 浏览型号KSC2517YJ69Z的Datasheet PDF文件第2页浏览型号KSC2517YJ69Z的Datasheet PDF文件第3页浏览型号KSC2517YJ69Z的Datasheet PDF文件第4页浏览型号KSC2517YJ69Z的Datasheet PDF文件第5页 
KSC2517  
High Speed Switching Industrial Use  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
150  
100  
12  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
V
V
CBO  
CEO  
EBO  
V
I
I
5
A
C
10  
A
CP  
P
P
Collector Dissipation (T =25°C)  
1.5  
W
W
A
C
C
a
Collector Dissipation (T =25°C)  
30  
C
I
Base Current  
2.5  
B
T
T
Junction Temperature  
150  
- 55 ~ 150  
°C  
°C  
J
Storage Temperature  
STG  
* Pw300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
100  
150  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 3A, I = 0.3A, L = 1mH  
V
V
CEO  
C
B1  
(sus)1  
= 3A, I = -I = 0.3A  
B1 B2  
CEX  
C
V
(off) = -5V, L = 180µH, Clamped  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
=6A, I = 1.2A, I = -0.3A,  
100  
V
CEX  
C
B1  
B2  
V
V
V
(off) = -5V, L = 180µH, Clamped  
BE  
CB  
CE  
I
I
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
= 100V, I = 0  
10  
1
µA  
CBO  
CER  
E
= 100V,R = 51@ T = 125°C  
mA  
BE  
C
I
I
V
V
= 100V, V (off) = -1.5V  
10  
1
µA  
mA  
CEX1  
CEX2  
CE  
CE  
BE  
= 100V, V (off) = -1.5V @  
BE  
T = 125°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 10V, I = 0  
10  
µA  
EBO  
EB  
C
h
h
V
V
= 5V, I = 0.2A  
40  
40  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 2A  
200  
0.6  
1.5  
0.5  
2.5  
0.5  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 3A, I = 0.3A  
V
V
CE  
BE  
C
C
B
(sat)  
= 3A, I = 0.3A  
B
t
t
t
V
= 50V, I = 3A  
µs  
µs  
µs  
ON  
CC  
C
I
= -I = 0.3A  
Storage Time  
B1  
B2  
STG  
F
R = 17Ω  
L
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2%  
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
60 ~ 120  
100 ~ 200  
FE2  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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