5秒后页面跳转
KSC2517YJ69Z PDF预览

KSC2517YJ69Z

更新时间: 2024-11-01 14:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 47K
描述
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSC2517YJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
最大集电极电流 (IC):5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KSC2517YJ69Z 数据手册

 浏览型号KSC2517YJ69Z的Datasheet PDF文件第2页浏览型号KSC2517YJ69Z的Datasheet PDF文件第3页浏览型号KSC2517YJ69Z的Datasheet PDF文件第4页浏览型号KSC2517YJ69Z的Datasheet PDF文件第5页 
KSC2517  
High Speed Switching Industrial Use  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
150  
100  
12  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
V
V
CBO  
CEO  
EBO  
V
I
I
5
A
C
10  
A
CP  
P
P
Collector Dissipation (T =25°C)  
1.5  
W
W
A
C
C
a
Collector Dissipation (T =25°C)  
30  
C
I
Base Current  
2.5  
B
T
T
Junction Temperature  
150  
- 55 ~ 150  
°C  
°C  
J
Storage Temperature  
STG  
* Pw300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
100  
150  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 3A, I = 0.3A, L = 1mH  
V
V
CEO  
C
B1  
(sus)1  
= 3A, I = -I = 0.3A  
B1 B2  
CEX  
C
V
(off) = -5V, L = 180µH, Clamped  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
=6A, I = 1.2A, I = -0.3A,  
100  
V
CEX  
C
B1  
B2  
V
V
V
(off) = -5V, L = 180µH, Clamped  
BE  
CB  
CE  
I
I
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
= 100V, I = 0  
10  
1
µA  
CBO  
CER  
E
= 100V,R = 51@ T = 125°C  
mA  
BE  
C
I
I
V
V
= 100V, V (off) = -1.5V  
10  
1
µA  
mA  
CEX1  
CEX2  
CE  
CE  
BE  
= 100V, V (off) = -1.5V @  
BE  
T = 125°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 10V, I = 0  
10  
µA  
EBO  
EB  
C
h
h
V
V
= 5V, I = 0.2A  
40  
40  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 2A  
200  
0.6  
1.5  
0.5  
2.5  
0.5  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 3A, I = 0.3A  
V
V
CE  
BE  
C
C
B
(sat)  
= 3A, I = 0.3A  
B
t
t
t
V
= 50V, I = 3A  
µs  
µs  
µs  
ON  
CC  
C
I
= -I = 0.3A  
Storage Time  
B1  
B2  
STG  
F
R = 17Ω  
L
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2%  
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
60 ~ 120  
100 ~ 200  
FE2  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与KSC2517YJ69Z相关器件

型号 品牌 获取价格 描述 数据表
KSC2518 FAIRCHILD

获取价格

High Speed, High Voltage Switching
KSC2518 SAMSUNG

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2518J69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2518O FAIRCHILD

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2518-O SAMSUNG

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2518OJ69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2518R FAIRCHILD

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2518-R SAMSUNG

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC2518Y FAIRCHILD

获取价格

暂无描述
KSC2518-Y SAMSUNG

获取价格

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast