KSC2518
High Speed, High Voltage Switching
•
•
Low Collector Saturation Voltage
Specified of Reverse Biased SOA With Inductive Load
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
500
V
V
CBO
CEO
EBO
400
V
7
V
I
I
I
4
A
C
8
A
CP
B
1
40
A
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
Junction Temperature
150
J
T
Storage Temperature
- 55 ~ 150
STG
* PW≤350µs, Duty Cycle≤10%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
400
450
Max.
Units
V
V
(sus)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
I
I
= 2A, I = 0.4A, L = 1mH
V
V
CEO
C
B1
(sus)1
= 2A, I = -I = 0.4A
B1 B2
CEX
C
T = 125°C, L = 180µH, Clamped
a
V
(sus)2
Collector-Emitter Sustaining Voltage
I
= 4A, I = 0.8A, -I = 0.4A
400
V
CEX
C
B1
B2
T = 125°C, L = 180µH, Clamped
a
I
I
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
V
= 400V, I = 0
10
1
µA
CBO
CER
CB
E
V
= 400V, R = 51Ω @ T = 125°C
mA
CE
BE
C
I
I
V
= 400V, V (off) = -1.5V
10
1
µA
mA
CEX1
CEX2
CE
BE
V
= 400V, V (off) = -1.5V @
CE
BE
T = 125°C
C
I
Emitter Cut-off Current
* DC Current Gain
V
= 5V, I = 0
10
80
µA
EBO
EB
C
h
h
V
V
= 5V, I = 0.3A
20
10
FE1
FE2
CE
CE
C
= 5V, I = 1.5A
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
I
I
= 1.5A, I = 0.3A
1
1.5
1
V
CE
BE
C
C
B
(sat)
= 1.5A, I = 0.3A
V
B
t
t
t
V
= 150V, I = 2A
µs
µs
µs
ON
CC
C
I
= - I = 0.4A
Storage Time
B1
B2
2.5
0.7
STG
F
R = 75Ω
L
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classification
FE
Classification
R
O
Y
h
20 ~ 40
30 ~ 60
40 ~ 80
FE1
©2000 Fairchild Semiconductor International
Rev. A, February 2000