是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.89 | Is Samacsys: | N |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 40 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2518J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2518O | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2518-O | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2518OJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2518R | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2518-R | SAMSUNG |
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Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2518Y | FAIRCHILD |
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暂无描述 | |
KSC2518-Y | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC2518YJ69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSC251G50LFG | CK-COMPONENTS |
获取价格 |
Sealed Tact Switch for SMT |