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KSC2518 PDF预览

KSC2518

更新时间: 2024-10-31 22:50:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
5页 50K
描述
High Speed, High Voltage Switching

KSC2518 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.89Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KSC2518 数据手册

 浏览型号KSC2518的Datasheet PDF文件第2页浏览型号KSC2518的Datasheet PDF文件第3页浏览型号KSC2518的Datasheet PDF文件第4页浏览型号KSC2518的Datasheet PDF文件第5页 
KSC2518  
High Speed, High Voltage Switching  
Low Collector Saturation Voltage  
Specified of Reverse Biased SOA With Inductive Load  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
500  
V
V
CBO  
CEO  
EBO  
400  
V
7
V
I
I
I
4
A
C
8
A
CP  
B
1
40  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* PW350µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
400  
450  
Max.  
Units  
V
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 2A, I = 0.4A, L = 1mH  
V
V
CEO  
C
B1  
(sus)1  
= 2A, I = -I = 0.4A  
B1 B2  
CEX  
C
T = 125°C, L = 180µH, Clamped  
a
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
= 4A, I = 0.8A, -I = 0.4A  
400  
V
CEX  
C
B1  
B2  
T = 125°C, L = 180µH, Clamped  
a
I
I
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
V
= 400V, I = 0  
10  
1
µA  
CBO  
CER  
CB  
E
V
= 400V, R = 51@ T = 125°C  
mA  
CE  
BE  
C
I
I
V
= 400V, V (off) = -1.5V  
10  
1
µA  
mA  
CEX1  
CEX2  
CE  
BE  
V
= 400V, V (off) = -1.5V @  
CE  
BE  
T = 125°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
10  
80  
µA  
EBO  
EB  
C
h
h
V
V
= 5V, I = 0.3A  
20  
10  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 1.5A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= 1.5A, I = 0.3A  
1
1.5  
1
V
CE  
BE  
C
C
B
(sat)  
= 1.5A, I = 0.3A  
V
B
t
t
t
V
= 150V, I = 2A  
µs  
µs  
µs  
ON  
CC  
C
I
= - I = 0.4A  
Storage Time  
B1  
B2  
2.5  
0.7  
STG  
F
R = 75Ω  
L
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
20 ~ 40  
30 ~ 60  
40 ~ 80  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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